EFC6602R-TR
MOSFET 2N-CH EFCP2718Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi EFC6602R-TR is a 2 N-channel MOSFET array, part of the EFCP2718 series, designed for efficient power switching in demanding applications. This device features a logic-level gate requiring only 2.5V drive for activation, simplifying driver circuitry. With a maximum power dissipation of 2W and an operating junction temperature of 150°C, it is suitable for high-density power management solutions. The array is supplied in a 6-XFBGA, FCBGA package for surface mounting, presented on tape and reel for automated assembly. Its typical applications include power supplies, battery management systems, and power distribution within automotive and industrial electronics. The gate charge (Qg) is specified at 55nC maximum at 4.5V Vgs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-XFBGA, FCBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 4.5V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | EFCP2718-6CE-020 |
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