EFC4K105NUZTDG
MOSFET 2N-CH 22V 25A 10WLCSPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi EFC4K105NUZTDG is a 2 N-channel MOSFET array in a 10-WLCSP (3.4x1.96) package. This device features a Drain-Source Voltage (Vdss) of 22V and can handle a continuous Drain Current (Id) of 25A (Ta) at 25°C. The MOSFET array is designed for logic-level gate drive, operating effectively with a 2.5V gate drive. Key electrical characteristics include a maximum Rds On of 3.55mOhm at 5A, 4.5V and a Gate Charge (Qg) of 43nC at 3.8V. The component offers a maximum power dissipation of 2.5W (Ta) and an operating temperature up to 150°C (TJ). This MOSFET array is commonly employed in industrial and consumer electronics applications requiring efficient power switching. The EFC4K105NUZTDG is supplied in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W (Ta) |
| Drain to Source Voltage (Vdss) | 22V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 3.55mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 3.8V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | 10-WLCSP (3.4x1.96) |
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