EFC4C012NLTDG
MOSFET 2N-CH 30V 30A 6WLCSPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EFC4C012NLTDG is a 2 N-channel MOSFET array designed for surface mount applications. This component, housed in a compact 6-WLCSP (3.5x1.9) package, features a continuous drain current capability and a drain-to-source voltage rating suitable for power management and switching applications. With a maximum power dissipation of 2.5W (Ta) and an operating junction temperature of 150°C, it is engineered for reliable performance in demanding environments. The MOSFET array exhibits a gate charge of 18nC (Max) at 4.5V and a threshold voltage of 2.2V (Max) at 1mA, indicating efficient switching characteristics. This device is commonly utilized in automotive, industrial, and consumer electronics sectors where space-constrained, high-performance power switching is critical. The component is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W (Ta) |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Supplier Device Package | 6-WLCSP (3.5x1.9) |
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