EFC4619R-TR
MOSFET 2N-CH EFCP1616Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EFC4619R-TR is a MOSFET array featuring two N-channel enhancement mode transistors. This component, part of the EFCP1616 series, is configured as a dual N-channel array with a logic level gate, supporting 2.5V drive. The device offers a maximum power dissipation of 1.6W and is supplied in a 4-XFBGA, FCBGA package for surface mounting. Key electrical characteristics include a gate charge (Qg) of 21.7nC at 4.5V. The component operates within a temperature range of 150°C (TJ) and is provided on tape and reel for automated assembly. This MOSFET array finds application in power management solutions across various industries, including automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, FCBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 21.7nC @ 4.5V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | EFCP1616-4CE-022 |
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