EFC4618R-P-TR
MOSFET 2N-CH EFCP1818Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EFC4618R-P-TR is a 2 N-Channel MOSFET array, specifically the EFCP1818-4CC-037, designed for efficient power management. This device features a logic-level gate, enabling operation with a 2.5V gate drive voltage. With a maximum power dissipation of 1.6W and an operating junction temperature of 150°C, it is suitable for demanding applications. The component is configured as dual common drain and is supplied in a 4-XFBGA package on tape and reel. Key parameters include a maximum gate charge of 25.4nC at 4.5V. This MOSFET array finds application in industries such as consumer electronics and industrial automation where compact, high-performance switching solutions are required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, FCBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 25.4nC @ 4.5V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | EFCP1818-4CC-037 |
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