EFC2K103NUZTDG
MOSFET 2N-CH 12V 40A 10WLCSPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EFC2K103NUZTDG is a 12V dual N-channel MOSFET array presented in a 10-WLCSP (3.54x1.77) package. This component, designed for surface mounting, features a common drain configuration and supports logic level gate operation with a 2.5V drive requirement. It offers a continuous drain current (Id) of 40A (Ta) and a maximum power dissipation of 3.3W (Ta) at an operating temperature of 150°C. Key electrical parameters include a Vgs(th) of 1.3V (Max) at 1mA and an Rds On of 1.8mOhm (Max) at 5A, 4.5V. The gate charge (Qg) is specified at 62nC at 6V. This MOSFET array is suitable for applications in automotive and industrial sectors requiring high-density power switching. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.3W (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 6V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | 10-WLCSP (3.54x1.77) |
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