EFC2K102NUZTDG
MOSFET 2N-CH 12V 33A 10WLCSPManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EFC2K102NUZTDG is a 2 N-channel MOSFET array designed for high-density power management. Featuring a 12V drain-to-source breakdown voltage and a continuous drain current capability of 33A at 25°C, this device offers low on-resistance of 2.65mOhm maximum at 5A, 4.5V. The logic-level gate allows for efficient 2.5V drive. With a maximum junction temperature of 150°C and a power dissipation of 3.1W (Ta), it is suitable for demanding applications. The component is housed in a compact 10-WLCSP (2.98x1.49) package, supplied on tape and reel. Its configuration includes dual common drain channels. This technology finds application in consumer electronics and portable devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 2.65mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 3.8V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | 10-WLCSP (2.98x1.49) |
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