EFC2K102ANUZTDG
MOSFET 2N-CH 12V 33A 10WLCSPManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi EFC2K102ANUZTDG, a 2 N-Channel MOSFET array, features a 12V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 33A at 25°C (Ta). This component offers a low on-resistance (Rds On) of 2.75mOhm at 5A and 4.5V. The device is packaged in a 10-WLCSP (2.98x1.49) with surface mount mounting type, supplied on tape and reel. It operates at a maximum junction temperature of 150°C and dissipates a maximum power of 3.1W (Ta). The gate charge (Qg) is a maximum of 42nC at 3.8V, and the gate threshold voltage (Vgs(th)) is 1.3V maximum at 1mA. This MOSFET array is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 2.75mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 3.8V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | 10-WLCSP (2.98x1.49) |
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