ECH8668-TL-H
MOSFET N/P-CH 20V 7.5A/5A 8ECHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi ECH8668-TL-H is a MOSFET array featuring N-channel and P-channel configurations within an 8-ECH (8-SMD, Flat Leads) package. This surface mount component is rated for a 20V Drain-to-Source voltage and supports continuous drain currents of 7.5A for the N-channel and 5A for the P-channel at 25°C. The device offers a low Rds On of 17mOhm at 4A, 4.5V, and incorporates logic level gate functionality. Key electrical parameters include a maximum power dissipation of 1.5W, a gate charge (Qg) of 10.8nC (max) at 4.5V, and an input capacitance (Ciss) up to 1060pF (max) at 10V. Operating temperature range extends to 150°C (TJ). This MOSFET array is suitable for applications in consumer electronics, industrial control systems, and automotive power management. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A, 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
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