ECH8659-TL-W
MOSFET 2N-CH 30V 7A SOT28Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi ECH8659-TL-W is a 2-N-channel MOSFET array designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 7A at 25°C, with a low on-resistance (Rds On) of 24mOhm at 3.5A and 10V Vgs. The MOSFET array is built with Metal Oxide technology and offers a Logic Level Gate feature, supporting operation with a 4V drive. Key electrical parameters include a Gate Charge (Qg) of 11.8nC (max) at 10V and an Input Capacitance (Ciss) of 710pF (max) at 10V Vds. Packaged in an 8-SMD, Flat Leads (SOT-28FL/ECH8) configuration, this component supports surface mounting and operates up to a maximum junction temperature of 150°C. The power dissipation is rated at 1.3W. This device is suitable for use in automotive and industrial power management systems. It is supplied in Digi-Reel® packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.8nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SOT-28FL/ECH8 |
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