ECH8659-M-TL-H
MOSFET 2N-CH 30V 7A 8ECHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi ECH8659-M-TL-H is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 7A at 25°C. With a low Rds(on) of 24mOhm at 3.5A and 10V Vgs, it minimizes conduction losses. The logic level gate drive requires only 4V for activation, enhancing compatibility with low-voltage control signals. It offers a maximum power dissipation of 1.5W and is housed in an 8-ECH surface-mount package, supplied on tape and reel. Key electrical parameters include a gate charge of 11.8nC and input capacitance of 710pF, both measured at 10V. This component is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.8nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
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