ECH8653-TL-H
MOSFET 2N-CH 20V 7.5A 8ECHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi ECH8653-TL-H is a 20V dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a low on-resistance of 20mOhm at 4A and 8V, coupled with a continuous drain current capability of 7.5A. The logic level gate enhances compatibility with a wider range of control signals. With a maximum power dissipation of 1.5W and an operating junction temperature up to 150°C, this MOSFET array is suitable for demanding environments. Key parameters include a gate charge of 18.5nC at 8V and input capacitance of 1280pF at 10V. Packaged in an 8-lead ECH surface mount configuration and supplied on tape and reel, the ECH8653-TL-H finds utility in automotive, consumer electronics, and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1280pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4A, 8V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
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