ECH8651R-TL-HX
MOSFET 2N-CH 24V 10A 8ECHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi ECH8651R-TL-HX is a 24V, dual N-channel MOSFET array designed for efficient power switching. Featuring a low Rds(on) of 14mOhm at 5A and 4.5V Vgs, this component offers superior conduction characteristics. Its 10A continuous drain current capability and 1.5W power dissipation make it suitable for demanding applications. The logic level gate feature simplifies driving circuitry, reducing the need for level shifting. With a maximum operating junction temperature of 150°C and packaged in an 8-SMD, flat leads (8-ECH) configuration on tape and reel, the ECH8651R-TL-HX is engineered for high-volume surface mount assembly. This device finds application in consumer electronics, industrial control, and automotive systems where compact, high-performance power switching is required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
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