ECH8619-TL-E
MOSFET N/P-CH 60V 3A/2A 8ECHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi ECH8619-TL-E is a MOSFET array featuring complementary N-channel and P-channel configurations. This component is designed for 60V drain-to-source voltage (Vdss) with continuous drain currents of 3A for the N-channel and 2A for the P-channel, both specified at 25°C. It offers a maximum power dissipation of 1.5W and a low on-resistance (Rds On) of 93mOhm at 1.5A and 10V. The device utilizes a logic level gate for enhanced drive flexibility. Key electrical parameters include a gate charge (Qg) of 12.8nC (max) at 10V and an input capacitance (Ciss) of 560pF (max) at 20V.
The ECH8619-TL-E is housed in an 8-pin surface mount package (8-ECH) and supplied on tape and reel. Its operating temperature range extends up to 150°C (TJ). This component is suitable for applications in power management, battery charging circuits, and general switching applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 20V |
| Rds On (Max) @ Id, Vgs | 93mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.8nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
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