ECH8602M-TL-H
MOSFET 2N-CH 30V 6A 8ECHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi ECH8602M-TL-H is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. With a low on-resistance (Rds On) of 30mOhm at 3A and 4.5V Vgs, it minimizes conduction losses. The logic level gate ensures compatibility with lower voltage control signals. This MOSFET array is available in an 8-ECH surface mount package, suitable for compact designs, and operates up to a junction temperature of 150°C. It is commonly found in power management solutions, consumer electronics, and industrial control systems. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
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