ECH8601M-TL-H
MOSFET 2N-CH 24V 8A 8ECHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi ECH8601M-TL-H is a 24V dual N-channel MOSFET array designed for advanced power management applications. This device features a low on-resistance of 23mOhm at 4A and 4.5V Vgs, enabling efficient power switching. The logic-level gate drive supports 2.5V operation, simplifying interface requirements with lower voltage control circuitry. With a continuous drain current capability of 8A (Ta) and a junction temperature rating of 150°C, this MOSFET array is suitable for demanding environments. Its common drain configuration and 8-ECH package with flat leads facilitate compact, high-density surface-mount designs. Applications include power supplies, battery management, and motor control in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | 8-ECH |