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ECH8601M-C-TL-H

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ECH8601M-C-TL-H

MOSFET 2N-CH 24V 8A 8ECH

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

onsemi ECH8601M-C-TL-H is a 24V, 8A dual N-channel MOSFET array designed for surface mount applications. This component, housed in an 8-ECH package, features a common drain configuration and is optimized for 2.5V gate drive, offering a low Rds(on) of 23mOhm at 4A, 4.5V. With a continuous drain current capability of 8A and a maximum power dissipation of 1.5W, it is suitable for high-efficiency switching applications. The device operates reliably up to a junction temperature of 150°C. This MOSFET array finds utility in power management solutions across various industries, including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Leads
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Drain
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.5W
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C8A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs23mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V
FET FeatureLogic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id-
Supplier Device Package8-ECH

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