SBAS16DXV6T1G
DIODE ARRAY GP 100V 200MA SOT563Manufacturer: onsemi
Categories: Diode Arrays
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The onsemi SBAS16DXV6T1G is a general-purpose diode array featuring two independent diodes. Each diode is rated for a maximum DC reverse voltage of 100 V and can handle an average rectified forward current of 200 mA. The forward voltage drop is specified as 1.25 V at 150 mA. This component exhibits a reverse leakage current of 1 µA at 100 V and possesses a reverse recovery time of 6 ns. Designed for small signal applications requiring up to 200 mA, the SBAS16DXV6T1G is housed in a SOT-563, SOT-666 package, facilitating surface mounting. Its operating junction temperature range is -55°C to 150°C. This diode array is commonly employed in consumer electronics and telecommunications systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 6 ns |
| Technology | Standard |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Supplier Device Package | SOT-563 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
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