NSDEMP11XV6T5G
DIODE ARRAY GP 80V 100MA SOT563Manufacturer: onsemi
Categories: Diode Arrays
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onsemi NSDEMP11XV6T5G. This diode array features a 2 pair common anode configuration, providing 80V reverse voltage capability per diode. Each diode in the array handles a continuous forward current of 100mA (DC) with a low forward voltage drop of 1.2V at 100mA. The reverse leakage current is rated at 100 nA at 70V. With a fast 4 ns reverse recovery time, this device is suitable for small signal applications up to 200mA. The component is housed in a compact SOT-563, SOT-666 package, designed for surface mount applications. Operating temperature range is from -55°C to 150°C. This onsemi diode array is commonly utilized in telecommunications and consumer electronics for signal switching and protection. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 2 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 100mA (DC) |
| Supplier Device Package | SOT-563 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 70 V |
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