NRVHP8H200MFDT3G
DIODE ARRAY GP 200V 4A 8DFNManufacturer: onsemi
Categories: Diode Arrays
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The onsemi SWITCHMODE™ NRVHP8H200MFDT3G is a dual independent diode array designed for high-reliability applications. This component features a 200V reverse voltage rating and a 4A average rectified forward current per diode. Its fast recovery time of 30 ns ensures efficient switching performance. The diode array is housed in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) for surface mounting. With a low reverse leakage of 500 nA at 200V and a forward voltage drop of 910 mV at 8A, it offers optimized performance. Qualified to AEC-Q101 standards and designated for automotive grade, this device is suitable for demanding automotive and industrial environments. Operating temperature ranges from -55°C to 175°C.
Additional Information
Series: SWITCHMODE™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 4A |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 910 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 200 V |
| Qualification | AEC-Q101 |
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