NRVBD660CTT4G
DIODE ARRAY SCHOTTKY 60V 3A DPAKManufacturer: onsemi
Categories: Diode Arrays
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The onsemi SWITCHMODE™ NRVBD660CTT4G is a Schottky diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 60V and a forward voltage of 700mV at 3A. Each diode within the array is rated for an average rectified current of 3A, with a reverse leakage of 100 µA at 60V. The device is designed for surface mount applications, housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. Qualified to AEC-Q101 for automotive applications, it operates across a junction temperature range of -65°C to 175°C. The NRVBD660CTT4G is supplied on tape and reel (TR). This diode array is suitable for use in power rectification and switching applications within the automotive sector.
Additional Information
Series: SWITCHMODE™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 3A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 60 V |
| Qualification | AEC-Q101 |
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