MURHB860CTT4G
DIODE ARRAY GP 600V 4A D2PAKManufacturer: onsemi
Categories: Diode Arrays
Quality Control: Learn More
The onsemi MEGAHERTZ™ MURHB860CTT4G is a high-speed diode array featuring a common cathode configuration. This surface mount device, housed in a TO-263AB (D2PAK) package, offers a maximum DC reverse voltage of 600V and an average rectified current of 4A per diode. With a fast reverse recovery time (trr) of 35 ns, it is suitable for applications requiring efficient switching. The forward voltage (Vf) is rated at a maximum of 2.8V at 4A, and the reverse leakage current is 10 µA at 600V. Operating junction temperatures range from -65°C to 175°C. This component finds application in power supply rectification, high-frequency inverters, and motor control systems.
Additional Information
Series: MEGAHERTZ™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 4A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.8 V @ 4 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
Request a Quote
Clients Also Buy
MURH840CTG
DIODE ARRAY GP 400V 4A TO220
MURH860CTG
DIODE ARRAY GP 600V 4A TO220
MURHS160T3G
DIODE GEN PURP 600V 1A SMB
