MURHB860CTT4
DIODE ARRAY GP 600V 4A D2PAKManufacturer: onsemi
Categories: Diode Arrays
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onsemi MEGAHERTZ™ MURHB860CTT4 is a high-performance diode array featuring a common cathode configuration. This component offers a maximum repetitive reverse voltage (Vr) of 600V and a continuous average forward current (Io) of 4A per diode. With a fast recovery time (trr) of 35 ns, it is suited for applications demanding efficient switching. The forward voltage drop (Vf) is a maximum of 2.8V at 4A. The diode array exhibits a low reverse leakage current of 10 µA at its maximum reverse voltage. Packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount configuration, the MURHB860CTT4 is supplied on tape and reel. This component is utilized in power supply rectification, motor control, and automotive applications. Operating junction temperature ranges from -65°C to 175°C.
Additional Information
Series: MEGAHERTZ™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 4A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.8 V @ 4 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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