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MURHB860CTG

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MURHB860CTG

DIODE ARRAY GP 600V 4A D2PAK

Manufacturer: onsemi

Categories: Diode Arrays

Quality Control: Learn More

The onsemi MEGAHERTZ™ MURHB860CTG is a high-performance diode array featuring a common cathode configuration. This component offers a 600V reverse voltage rating and a 4A average rectified current per diode, with a low reverse leakage of 10 µA at 600V. The fast recovery time of 35 ns, characterized as less than 500ns for speeds above 200mA (Io), makes it suitable for demanding applications. The forward voltage drop is a maximum of 2.8V at 4A. Packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package, this device is designed for efficient thermal management in high-power switching circuits. It finds application in power supplies, industrial automation, and electric vehicle charging systems.

Additional Information

Series: MEGAHERTZ™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)4A
Supplier Device PackageD2PAK
Operating Temperature - Junction-65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2.8 V @ 4 A
Current - Reverse Leakage @ Vr10 µA @ 600 V

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