ISL9K8120P3
DIODE ARR AVAL 1200V 8A TO220-3Manufacturer: onsemi
Categories: Diode Arrays
Quality Control: Learn More
The onsemi Stealth™ ISL9K8120P3 is a dual diode array featuring a common cathode configuration. This through-hole packaged component, utilizing Avalanche technology, offers a maximum DC reverse voltage of 1200V and an average rectified current of 8A per diode. With a forward voltage drop of 3.3V at 8A and a reverse leakage of 100 µA at 1200V, this device exhibits a fast recovery time of 44 ns. The TO-220-3 package is suitable for applications in high-voltage power supplies, solar inverters, and electric vehicle charging systems. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: Stealth™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 44 ns |
| Technology | Avalanche |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 8A |
| Supplier Device Package | TO-220-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 3.3 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
Request a Quote
Clients Also Buy
ISL9R3060G2-F085
DIODE GEN PURP 600V 30A TO247-2
ISL9R18120S3ST
DIODE GEN PURP 1.2KV 18A D2PAK
FFPF60SB60DSTU
DIODE ARR AVAL 600V 4A TO220F
