ISL9K18120G3
DIODE ARR AVAL 1200V 18A TO247-3Manufacturer: onsemi
Categories: Diode Arrays
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The onsemi ISL9K18120G3, a Stealth™ series diode array, offers a robust solution for high-voltage applications. This component features a common cathode configuration with two diodes, each rated for a maximum DC reverse voltage of 1200 V and an average rectified current of 18 A. Its avalanche technology ensures enhanced reliability under transient overvoltage conditions. The forward voltage drop is a maximum of 3.3 V at 18 A, with a reverse leakage current of 100 µA at 1200 V. The reverse recovery time (trr) is specified at 70 ns, classifying it as a fast recovery diode. Mounted via a through-hole TO-247-3 package, this diode array is suitable for demanding environments with an operating junction temperature range of -55°C to 150°C. It finds application in power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: Stealth™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 70 ns |
| Technology | Avalanche |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 18A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 3.3 V @ 18 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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