FFSH2065BDN
650V 20A SIC SBD GEN 1.5Manufacturer: onsemi
Categories: Diode Arrays
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The onsemi FFSH2065BDN is a Silicon Carbide (SiC) Schottky diode array, featuring a common cathode configuration with two diodes in one package. This device offers a maximum DC reverse voltage of 650 V and an average rectified current of 10 A per diode. It exhibits a low forward voltage drop of 1.7 V at 10 A and a minimal reverse leakage current of 40 µA at 650 V. The FFSH2065BDN boasts zero reverse recovery time, contributing to high-efficiency operation. Its TO-247-3 through-hole package is suitable for demanding applications in power factor correction, electric vehicle charging, industrial power supplies, and solar inverters. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 51 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Qualification | - |
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