FFH30US30DN
DIODE ARR AVAL 300V 30A TO247-3Manufacturer: onsemi
Categories: Diode Arrays
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The onsemi Stealth™ FFH30US30DN is a high-performance avalanche diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 300V and a substantial average rectified current handling capability of 30A per diode. With a forward voltage drop of 1V at 30A and a reverse leakage of 100 µA @ 300V, it excels in applications requiring efficient power management. The device boasts a fast reverse recovery time of 55 ns and utilizes avalanche technology for enhanced robustness. Operating junction temperatures range from -55°C to 175°C. This diode array is commonly employed in power supplies, power factor correction circuits, and high-frequency switching applications across industrial and automotive sectors.
Additional Information
Series: Stealth™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 55 ns |
| Technology | Avalanche |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 30A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 30 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 300 V |
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