FEP16DTA
DIODE ARRAY GP 200V 16A TO220-3Manufacturer: onsemi
Categories: Diode Arrays
Quality Control: Learn More
The onsemi FEP16DTA features a diode array with a common anode configuration, offering a fast recovery time of 35 ns. This component is rated for a maximum DC reverse voltage of 200 V and can handle an average rectified current of 16 A per diode. The low forward voltage drop of 950 mV at 8 A and a reverse leakage current of 10 µA at 200 V make it suitable for demanding applications. Packaged in a TO-220-3 through-hole configuration, this device operates across a junction temperature range of -55°C to 150°C. The FEP16DTA is utilized in power supply rectification, voltage clamping, and high-frequency switching circuits within the telecommunications and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 16A |
| Supplier Device Package | TO-220-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
Request a Quote
Clients Also Buy
MBR2060CTG
DIODE ARR SCHOTT 60V 10A TO220
MURHB860CT
DIODE ARRAY GP 600V 4A D2PAK
BAS40-04LT1G
DIODE ARR SCHOTT 40V 120MA SOT23
