FEP16BTD
DIODE ARRAY GP 100V 16A TO220-3Manufacturer: onsemi
Categories: Diode Arrays
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onsemi FEP16BTD is a dual diode array designed for high-current rectification applications. This component features a 1 pair series connection configuration, offering a maximum DC reverse voltage (Vr) of 100 V. Each diode in the array is rated for an average rectified current (Io) of 16 A, with a typical forward voltage (Vf) of 950 mV at 8 A. The reverse leakage current at the maximum reverse voltage is specified as 10 µA @ 100 V.
With a fast recovery time (trr) of 35 ns, the FEP16BTD is suitable for applications requiring efficient switching performance. The operating junction temperature range is -55°C to 150°C. Packaged in a standard TO-220-3 through-hole configuration, this diode array is commonly utilized in power supply circuits, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Series Connection |
| Current - Average Rectified (Io) (per Diode) | 16A |
| Supplier Device Package | TO-220-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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