SBC857BDW1T1G-M02
SBC857BDW1T1G-M02Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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onsemi SBC857BDW1T1G-M02 is a bipolar transistor array featuring four independent NPN transistors within a single SC-88/SC70-6/SOT-363 package. This device offers a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA per transistor. With a power dissipation of 380mW, it is well-suited for applications requiring compact, high-density solutions. Key electrical parameters include a low collector cutoff current of 15nA (ICBO) and excellent DC current gain (hFE) of a minimum of 220 at 2mA/5V. The saturation voltage (Vce Sat) is specified at a maximum of 650mV at 5mA/100mA. This component is AEC-Q101 qualified and rated for automotive applications, operating across a temperature range of -55°C to 150°C. Common applications include general-purpose switching and amplification in automotive control systems and consumer electronics.
Additional Information
Series: SBC857BDW1T1GRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 380mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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