SBC846BDW1T1G-M01
SBC846BDW1T1G-M01Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
The onsemi SBC846BDW1T1G-M01 is a Bipolar (BJT) Transistor Array designed for surface mount applications. This component features a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 200 at 2mA and 5V, with a Vce saturation of 600mV at 5mA collector current. The device exhibits a low collector cutoff current of 15nA (ICBO). With a maximum power dissipation of 380mW and an operating temperature range of -55°C to 150°C (TJ), it is qualified to AEC-Q101 standards for automotive applications. The component is supplied in an SC-88/SC70-6/SOT-363 package, suitable for use in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 380mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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