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SBC846BDW1T1G-M01

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SBC846BDW1T1G-M01

SBC846BDW1T1G-M01

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

The onsemi SBC846BDW1T1G-M01 is a Bipolar (BJT) Transistor Array designed for surface mount applications. This component features a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 200 at 2mA and 5V, with a Vce saturation of 600mV at 5mA collector current. The device exhibits a low collector cutoff current of 15nA (ICBO). With a maximum power dissipation of 380mW and an operating temperature range of -55°C to 150°C (TJ), it is qualified to AEC-Q101 standards for automotive applications. The component is supplied in an SC-88/SC70-6/SOT-363 package, suitable for use in automotive and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max380mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)65V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Supplier Device PackageSC-88/SC70-6/SOT-363
GradeAutomotive
QualificationAEC-Q101

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