NSVT3904DP6T5G
TRANS 2NPN 40V 0.2A SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi NSVT3904DP6T5G is a Bipolar Junction Transistor (BJT) array featuring two NPN transistors in a complementary configuration. This device offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 200mA. With a transition frequency of 200MHz and a maximum power dissipation of 350mW, it is suitable for general-purpose switching and amplification applications. The minimum DC current gain (hFE) is rated at 100 at 10mA and 1V. The saturation voltage (Vce Sat) is a maximum of 300mV at 5mA base current and 50mA collector current. Supplied in a compact SOT-963 surface mount package on tape and reel, this component is commonly utilized in consumer electronics and industrial control systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-963 |
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