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NSV60101DMR6T2G

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NSV60101DMR6T2G

60V 1A DUAL NPN LOW VCE(SAT) IN

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

onsemi NSV60101DMR6T2G is a dual NPN bipolar transistor array designed for high-performance applications. This Automotive Grade component, qualified to AEC-Q101 standards, features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. It offers a low Vce(sat) of 250mV at 50mA collector current and 1A, with a minimum DC current gain (hFE) of 250 at 100mA and 5V. The NSV60101DMR6T2G operates at a transition frequency of 200MHz and has a maximum power dissipation of 400mW. Packaged in an SC-74 (SOT-457) surface mount configuration, it is supplied in Cut Tape (CT). This device is suitable for use in automotive and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max400mW
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 50mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 5V
Frequency - Transition200MHz
Supplier Device PackageSC-74
GradeAutomotive
QualificationAEC-Q101

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