NSV60100DMTWTBG
DUAL TRANSISTOR PNPManufacturer: onsemi
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
The onsemi NSV60100DMTWTBG is a dual PNP bipolar junction transistor array designed for surface mount applications. This component features a 60V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 1A. It offers a transition frequency (fT) of 155MHz and a power dissipation of 2.27W. The device exhibits a minimum DC current gain (hFE) of 120 at 500mA and 2V, with a Vce saturation of 300mV at 100mA and 2A. Collector cutoff current (ICBO) is a maximum of 100nA. Packaged in a compact 6-WDFN (2x2) with an exposed pad, it operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in various industrial and consumer electronics applications requiring high-performance switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 2.27W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 155MHz |
| Supplier Device Package | 6-WDFN (2x2) |
Request a Quote
Clients Also Buy
NSS60100DMTTBG
TRANS 2PNP 60V 1A
MC1413BP
TRANS 7NPN DARL 50V 0.5A 16DIP
NSVT3904DXV6T1G
TRANS 2NPN 40V 0.2A SOT563
