NST3906DXV6T1
TRANS 2PNP 40V 0.2A SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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onsemi NST3906DXV6T1 is a dual PNP bipolar junction transistor (BJT) array designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. The NST3906DXV6T1 features a transition frequency of 250MHz and a minimum DC current gain (hFE) of 100 at 10mA and 1V. The device is rated for a maximum power dissipation of 500mW and has a Vce saturation of 400mV at 5mA collector current and 50mA base current. Operating temperature ranges from -55°C to 150°C. The package is SOT-563, supplied on tape and reel. This device is commonly utilized in consumer electronics and industrial control systems for general-purpose amplification and switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-563 |
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