NSS60100DMTTBG
TRANS 2PNP 60V 1AManufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi NSS60100DMTTBG is a dual PNP bipolar junction transistor array designed for high-performance applications. This component features a collector-emitter breakdown voltage of 60V and a maximum collector current of 1A. With a transition frequency of 155MHz and a minimum DC current gain of 120 at 500mA and 2V, it is suitable for signal amplification and switching tasks. The device offers a maximum power dissipation of 2.27W and operates across a temperature range of -55°C to 150°C. It is supplied in a 6-WDFN (2x2) exposed pad package, mounted via surface mount technology, and is available on tape and reel. The saturation voltage at 100mA collector current and 1A collector current is a maximum of 300mV. This component finds utility in various industrial and consumer electronics, including power management and control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 2.27W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 155MHz |
| Supplier Device Package | 6-WDFN (2x2) |
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