NJX1675PDR2G
TRANS NPN/PNP 30V 3A 8SOICManufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi NJX1675PDR2G is a bipolar transistor array featuring one NPN and one PNP transistor. It offers a collector-emitter breakdown voltage of 30V and a maximum collector current of 3A. The device boasts a DC current gain (hFE) of 180 at 1A, 2V for the NPN and 180 at 1A, 2V for the PNP. Transition frequencies are 100MHz for the NPN and 120MHz for the PNP. Saturation voltages are specified as 115mV (NPN) and 170mV (PNP) at 200mA, 2A and 200mA, 2A respectively. This component is designed for surface mounting within an 8-SOIC package and has a maximum power dissipation of 2W. The operating temperature range is -55°C to 150°C. This transistor array is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 2W |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 115mV @ 200mA, 2A / 170mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A, 2V |
| Frequency - Transition | 100MHz, 120MHz |
| Supplier Device Package | 8-SOIC |
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