MC1413DR2
TRANS 7NPN DARL 50V 0.5A 16SOManufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi MC1413DR2 is a Bipolar Junction Transistor (BJT) array featuring seven NPN Darlington configurations. This device is designed for surface mounting within a 16-SOIC package, specified for operation up to a junction temperature of 150°C. Each transistor in the array supports a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 500mA. The minimum DC current gain (hFE) is rated at 1000 when operating at 350mA and 2V. The saturation voltage (Vce Sat) is a maximum of 1.6V at 500µA base current and 350mA collector current. This component is frequently utilized in applications requiring multiple high-gain switching or amplification stages, such as industrial control systems and consumer electronics. The MC1413DR2 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 7 NPN Darlington |
| Operating Temperature | 150°C (TJ) |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | 16-SOIC |
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