MC1413BP
TRANS 7NPN DARL 50V 0.5A 16DIPManufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi MC1413BP is a Bipolar Junction Transistor (BJT) array featuring seven NPN Darlington pairs. This device is configured for through-hole mounting in a 16-PDIP package. Each transistor exhibits a collector current (Ic) capability of up to 500mA and a collector-emitter breakdown voltage (Vce) of 50V. The device boasts a minimum DC current gain (hFE) of 1000 at an Ic of 350mA and Vce of 2V, with a saturation voltage (Vce(sat)) of 1.6V at 500µA base current and 350mA collector current. Operating at a junction temperature up to 150°C, the MC1413BP finds application in various industrial control and interface circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 16-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Transistor Type | 7 NPN Darlington |
| Operating Temperature | 150°C (TJ) |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | 16-PDIP |
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