MC1413BDG
TRANS 7NPN DARL 50V 0.5A 16SOManufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi MC1413BDG is an array of seven NPN Darlington bipolar junction transistors. Each transistor offers a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 500mA. The device exhibits a minimum DC current gain (hFE) of 1000 at 350mA and 2V. Saturation voltage (Vce Sat) is specified at 1.6V maximum for an input base current of 500µA driving a collector current of 350mA. This component is housed in a 16-SOIC surface mount package, designed for operation across a temperature range of -55°C to 150°C (TJ). The MC1413BDG is commonly utilized in industrial control, consumer electronics, and automotive applications requiring multiple high-gain switching or amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 16-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 7 NPN Darlington |
| Operating Temperature | 150°C (TJ) |
| Power - Max | - |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | 16-SOIC |
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