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MBT6429DW1T1

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MBT6429DW1T1

TRANS 2NPN 45V 0.2A SOT363

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

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The onsemi MBT6429DW1T1 is a bipolar transistor array featuring two NPN transistors. This device offers a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 200mA. With a transition frequency of 700MHz, it is suitable for high-frequency applications. The array boasts a high DC current gain (hFE) of 500 minimum at 100µA collector current and 5V collector-emitter voltage. Saturation voltage is specified at 600mV maximum for 5mA base current and 100mA collector current. Operating temperature ranges from -55°C to 150°C. Supplied in a SOT-363 package for surface mounting, this component is commonly utilized in consumer electronics and communication systems. The MBT6429DW1T1 is delivered on tape and reel.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max150mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 100µA, 5V
Frequency - Transition700MHz
Supplier Device PackageSC-88/SC70-6/SOT-363

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