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MBT3904DW1T1G-M01

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MBT3904DW1T1G-M01

TRANS NPN SS 40V 0.2A SC88

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

onsemi MBT3904DW1T1G-M01 is a dual NPN bipolar junction transistor array designed for surface mounting in SC-88/SC70-6/SOT-363 packages. This AEC-Q101 qualified component features a collector current capability of up to 200mA and a collector-emitter breakdown voltage of 40V. The MBT3904DW1T1G-M01 exhibits a minimum DC current gain (hFE) of 100 at 10mA and 1V, with a transition frequency of 300MHz. Saturation voltage (Vce) is specified at a maximum of 300mV for a base current of 5mA and collector current of 50mA. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 150mW. This component is suitable for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max150mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition300MHz
Supplier Device PackageSC-88/SC70-6/SOT-363
GradeAutomotive
QualificationAEC-Q101

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