MBT3904DW1T1
TRANS 2NPN 40V 0.2A SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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The onsemi MBT3904DW1T1 is a bipolar junction transistor (BJT) array featuring two NPN transistors. This component is designed for surface mounting within the SC-88/SC70-6/SOT-363 package. It offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. With a transition frequency of 300MHz and a maximum power dissipation of 150mW, the MBT3904DW1T1 exhibits a minimum DC current gain (hFE) of 100 at 10mA and 1V. The saturation voltage (Vce Sat) is a maximum of 300mV at 5mA base current and 50mA collector current. Operating temperature range is from -55°C to 150°C. This device is suitable for applications in consumer electronics, industrial control, and general-purpose amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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