HN1B01FDW1T1
TRANS NPN/PNP 50V 0.2A SC74Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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onsemi HN1B01FDW1T1 is a bipolar transistor array featuring one NPN and one PNP transistor. This component offers a collector-emitter breakdown voltage of 50V with a maximum collector current (Ic) of 200mA. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V collector-emitter voltage. Saturation voltages are specified at 250mV and 300mV for the NPN and PNP transistors respectively, under specific base and collector current conditions. With a maximum power dissipation of 380mW, this transistor array is housed in an SC-74 (SOT-457) surface mount package, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C. Applications include general purpose switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 380mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | - |
| Supplier Device Package | SC-74 |
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