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FTM3725

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FTM3725

TRANS 4NPN 40V 1.2A 16SOIC

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

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The onsemi FTM3725 is a quad NPN bipolar junction transistor array designed for high-speed switching applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 1.2A, with a maximum power dissipation of 1W. The transistor array exhibits a transition frequency of 250MHz and a minimum DC current gain (hFE) of 60 at 100mA and 1V. Saturation voltage (Vce(sat)) is specified at a maximum of 950mV for 100mA base current and 1A collector current, with a collector cutoff current (ICBO) of 100nA. Packaged in a 16-SOIC surface mount configuration, the FTM3725 operates across a temperature range of -55°C to 150°C. Its robust specifications make it suitable for use in industrial automation, power management, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case16-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Transistor Type4 NPN (Quad)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max1W
Current - Collector (Ic) (Max)1.2A
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic950mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 100mA, 1V
Frequency - Transition250MHz
Supplier Device Package16-SOIC

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