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FMBM5551-SB16001

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FMBM5551-SB16001

TRANS NPN 160V 0.6A SSOT-6

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

onsemi Bipolar Transistor Array FMBM5551-SB16001 offers dual NPN configuration in a SuperSOT™-6 package. This surface-mount component features a 160V collector-emitter breakdown voltage and a 600mA maximum collector current. With a transition frequency of 300MHz and a maximum power dissipation of 700mW, it is suitable for demanding applications. The device exhibits a minimum DC current gain of 80 at 10mA, 5V, and a collector saturation voltage of 200mV at 5mA, 50mA. Operating temperature reaches up to 150°C (TJ). This component is commonly utilized in industrial and consumer electronics for amplification and switching functions. Packaged in a Tape & Reel (TR), the SOT-23-6 Thin, TSOT-23-6 form factor ensures efficient board space utilization.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Power - Max700mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)160V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition300MHz
Supplier Device PackageSuperSOT™-6

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