Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays

FFB5551

Banner
productimage

FFB5551

TRANS 2NPN 160V 0.2A SC70-6

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

The onsemi FFB5551 is a dual NPN bipolar junction transistor array designed for surface mount applications. This component features a collector-emitter breakdown voltage of 160V and a continuous collector current capability of 200mA. With a transition frequency of 300MHz and a minimum DC current gain (hFE) of 80 at 10mA and 5V, it is suitable for various amplification and switching tasks. The transistor array has a maximum power dissipation of 200mW and a collector cutoff current of 50nA (ICBO). It is supplied in an SC-88 (SC-70-6) package, also referenced as 6-TSSOP or SOT-363, on tape and reel. The operating temperature range is -55°C to 150°C. This device finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max200mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)160V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition300MHz
Supplier Device PackageSC-88 (SC-70-6)

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SBC857BDW1T1G

TRANS 2PNP 45V 0.1A SC88/SC70-6

product image
EMZ1DXV6T5G

TRANS NPN/PNP 60V 0.1A SOT563

product image
MPQ7051

POWER BIPOLAR TRANSISTOR NPN