EMZ1DXV6T5G
TRANS NPN/PNP 60V 0.1A SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays
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onsemi EMZ1DXV6T5G is a bipolar transistor array featuring one NPN and one PNP transistor. This component offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 100mA. It exhibits a minimum DC current gain (hFE) of 120 at 1mA collector current and 6V collector-emitter voltage. Transition frequencies are specified at 180MHz for the NPN and 140MHz for the PNP. The device has a maximum power dissipation of 500mW and is packaged in a SOT-563 surface mount configuration, supplied on tape and reel. Typical applications include automotive and industrial electronics requiring compact, dual bipolar transistor functionality.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz, 140MHz |
| Supplier Device Package | SOT-563 |
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