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EMZ1DXV6T5

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EMZ1DXV6T5

TRANS NPN/PNP 60V 0.1A SOT563

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

onsemi EMZ1DXV6T5 is a bipolar transistor array featuring one NPN and one PNP transistor in a SOT-563 package. This device offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 100mA. The transistors exhibit a minimum DC current gain (hFE) of 120 at 1mA, 6V. Transition frequencies are specified at 180MHz for the NPN and 140MHz for the PNP. Maximum power dissipation is 500mW. Saturation voltages are 400mV @ 5mA, 50mA for the NPN and 500mV @ 5mA, 50mA for the PNP. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in portable electronics and general-purpose switching applications. Supplied on Tape & Reel (TR).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max500mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Frequency - Transition180MHz, 140MHz
Supplier Device PackageSOT-563

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